| Integrated electronic and optoelectronic circuits and devices for pulsed time-of-flight laser rangefinding | ||
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The terms describing the performance of the measurement equipment are defined according to the IEEE Standard Dictionary of Electrical and Electronics Terms (IEEE 1996):
is the degree of correctness with which a measured value agrees with the true value
is the short-term deviations of the significant instants of a signal from their ideal positions in time
is the quality of coherence or repeatibility of measurement data, customarily expressed in terms of the standard deviation of the extendend set of measurement results
is the least value of the measured quantity that can be distinguished
analogue to digital
aluminium gallium arsenide
amplitude modulation
avalanche photodiode
amplitude and rise time compensation
application-specific integrated circuit
bipolar-CMOS, a semiconductor process containing bipolar and CMOS transistors
constant fraction discriminator
current mode gain control
complementary MOS, a semiconductor process containing both NMOS and PMOS transistors
capacitor-resistor
continuous wave
electronic gain control
electrostatic discharge
frequency modulation
full width at half maximum
gallium arsenide
infrared
metal –oxide semiconductor
near-infrared
n-channel MOS
personal computer
printed circuit board
p-i-n photodiode
p-channel MOS
photomultiplier tube
power supply rejection ratio
resistor-capacitor
root mean square
signal to noise ratio, here the ratio of the peak signal voltage to the rms of the noise voltage
Silicon-on-Insulator
time-to-amplitude converter
time-to-digital converter
time of flight
voltage mode gain control
voltage gain
speed of light
transit frequency
bias current
output current signal
timing point
rise time (from 10% to 90%)
input voltage signal
maximum amplitude
peak amplitude
offset voltage
output voltage signal
threshold voltage
transimpedance gain
standard deviation of the timing point
noise power